| Part Number | NP100P06PDG |
| Manufacturer | NEC |
| Title | MOS FIELD EFFECT TRANSISTOR |
| Description |
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. |
| Features |
• Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(DC) = m100 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0... |
| Datasheet |
 NP100P06PDG Datasheet
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