| Part Number | NE722S01 |
| Manufacturer | NEC |
| Title | NECs C TO X BAND N-CHANNEL GaAs MES FET |
| Description | NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron ... |
| Features |
• HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz • LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz • GATE LENGTH: LG = 0.8 µm (recessed gate) • GATE WIDTH: WG = 400 µm 2 O... |
| Datasheet |
 NE722S01 Datasheet
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