| Part Number | NE721S01 |
| Manufacturer | NEC |
| Title | GENERAL PURPOSE L TO X-BAND GaAs MESFET |
| Description | The NE721S01 is a low cost 0.8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make th... |
| Features |
• HIGH POWER GAIN: 7 dB TYP at 12 GHz • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz • LG = 0.8 µm, WG = 330 µm • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz • LOW COST PLASTIC PACKAGE 2 NE721S01 OUTLINE DIMENSIONS (Units in mm) PAC... |
| Datasheet |
 NE721S01 Datasheet
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