| Part Number | MTY100N10E |
| Manufacturer | Motorola |
| Title | TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's M... |
| Features |
EAS RθJC RθJA TL
CASE 340G –02, STYLE 1 TO –264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain C... |
| Datasheet |
 MTY100N10E Datasheet
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