| Part Number | MTW8N60E |
| Manufacturer | Motorola |
| Title | TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW8N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor TO-247 with Iso... |
| Features |
ource –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATING... |
| Datasheet |
 MTW8N60E Datasheet
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