| Part Number | MGY30N60D |
| Manufacturer | Motorola |
| Title | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY30N60D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diod... |
| Features |
bust RBSOA
C
IGBT & DIODE IN TO –264 30 A @ 90°C 50 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED G G E C E CASE 340G –02, Style 5 TO –264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0... |
| Datasheet |
 MGY30N60D Datasheet
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