| Part Number | RD07MVS2 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Title | Silicon MOSFET Power Transistor |
| Description | OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. 6.0+/-0.15 This devic... |
| Features |
•High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz •High Efficiency: 60%typ. (175MHz) •High Efficiency: 55%typ. (520MHz) •Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers In VHF/U... |
| Datasheet |
 RD07MVS2 Datasheet
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