| Part Number | RD07MUS2B |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Title | Silicon RF Power MOSFET |
| Description | RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 4.6+/-0.05 3.3+/-0.05 0.8+/-0.0... |
| Features |
High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode.
3
(0.25) (0.25)
INDEX MARK (Gate)
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Drain (output) 2...
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| Datasheet |
 RD07MUS2B Datasheet
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