| Part Number | RD06HVF1 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Title | MOS FET type transistor specifically designed for VHF RF power amplifiers applications |
| Description | Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. ... |
| Features |
High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
note(3)
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
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PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical...
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| Datasheet |
 RD06HVF1 Datasheet
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