| Part Number | RD04HMS2 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Title | Silicon MOSFET Power Transistor |
| Description | RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power 6.0+/-0.15 amplifiers applications. 4.9+... |
| Features |
1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode
2
3
(0.25) (0.25)
INDEX MARK (Gate)
APPLICATION
For output stage of high power amplifiers in ...
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| Datasheet |
 RD04HMS2 Datasheet
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