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QM10HB-2H

Mitsubishi Electric Semiconductor
Part Number QM10HB-2H
Manufacturer Mitsubishi Electric Semiconductor
Title DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE
Description MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM10HB-2H • • • • • IC Collector current .......
Features s otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC TC=25°C DC Ratings 1000 1000 1000 7 10 100 2
  –40~+150
  –40~+125 Charged part to case, AC for 1 minute Mounting screw M3 Typical value 2500 0.59~0.98 6~10 40 Unit V V V V...

Datasheet PDF File QM10HB-2H Datasheet

QM10HB-2H   QM10HB-2H   QM10HB-2H  




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