| Part Number | RD06HHF1 |
| Manufacturer | Mitsubishi Electric |
| Title | Silicon RF Power MOS FET |
| Description | RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4 •... |
| Features |
2
For output stage of high power amplifiers in HF band mobile radio sets.
12.3MIN
APPLICATION
1.2+/-0.4 0.8+0.10/-0.15
1 2 3
0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-0.5
5deg
PIN 1.Gate 2.Source 3.Drain UNIT:mm
9.5MAX
ABSOLUTE MAXIMUM RATINGS
...
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| Datasheet |
 RD06HHF1 Datasheet
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