| Part Number | RD100HHF1C |
| Manufacturer | Mitsubishi |
| Title | Silicon RF Power MOS FET |
| Description | RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 7.0±0.5 25.0±0.3 11.0±... |
| Features |
High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
17.0± 0.5
4-C2
1
2
9.6± 0.3 10.0± 0.3
3
5.0±0.3 18.5±0.3
2-R1.6 ± 0.15
3.3± 0.2
APPLICATION
For output stage of high power amplifiers in HF Ba...
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| Datasheet |
 RD100HHF1C Datasheet
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