| Part Number | RD02LUS2 |
| Manufacturer | Mitsubishi |
| Title | Silicon RF Power MOS FET |
| Description | RD02LUS2 is a MOS FET type transistor designed for VHF/UHF RF driver device. OUTLINE DRAWING FEATURES 1.High Power Gain and High Efficiency Pout... |
| Features |
1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W
2.Integrated gate protection diode
APPLICATION
For driver stage of high power amplifiers in VHF/UHF Band mobile radio sets.
RoHS...
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| Datasheet |
 RD02LUS2 Datasheet
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