| Part Number | MSAHZ52F120A |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Title | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Description | Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC... |
| Features |
• • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)... |
| Datasheet |
 MSAHZ52F120A Datasheet
|
