| Part Number | MSAGX60F60A |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Title | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Description | Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM θJ... |
| Features |
• • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)... |
| Datasheet |
 MSAGX60F60A Datasheet
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