| Part Number | MSAFZ50N10A |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Title | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Description | Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS... |
| Features |
• • • • • • • Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanc... |
| Datasheet |
 MSAFZ50N10A Datasheet
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