| Part Number | GTVA212701FA |
| Manufacturer | MACOM |
| Title | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| Description | The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features inpu... |
| Features |
input matching, high efficiency, and a thermally-enhanced earless package.
Package Types: H-87265J-2
Peak/Average Ratio (dB), Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz 3GPP WCDMA signal,
10 dB PA...
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| Datasheet |
 GTVA212701FA Datasheet
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