| Part Number | GTRB264318FC |
| Manufacturer | MACOM |
| Title | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| Description | The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier appli... |
| Features |
internal matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248KC-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VCC = 48 V, IDQ = 150 mA,
VGS(PEAK) = –5.6 V, ƒ = 269... |
| Datasheet |
 GTRB264318FC Datasheet
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