| Part Number | GTRB204402FC |
| Manufacturer | MACOM |
| Title | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| Description | The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power ampl... |
| Features |
high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 mA, VGS(Peak) = -5.5 V,
ƒ = 2020 MHz, 3GPP W...
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| Datasheet |
 GTRB204402FC Datasheet
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