| Part Number | CGHV1F025S |
| Manufacturer | MACOM |
| Title | GaN HEMT |
| Description | The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gai... |
| Features |
• Up to 15 GHz Operation • 25 W Typical Output Power • 11 dB Gain at 9.4 GHz • Application circuit for 8.9 - 9.6 GHz Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to mak... |
| Datasheet |
 CGHV1F025S Datasheet
|
