logo

CGH31240F

MACOM
Part Number CGH31240F
Manufacturer MACOM
Title GaN HEMT
Description The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide b...
Features
• 2.7 - 3.1 GHz Operation
• 12 dB Power Gain
• 60% Power Added Efficiency
• < 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes...

Datasheet PDF File CGH31240F Datasheet

CGH31240F   CGH31240F   CGH31240F  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map