| Part Number | CG2H30070F |
| Manufacturer | MACOM |
| Title | RF Power GaN HEMT |
| Description | The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt r... |
| Features |
• 0.5 - 3.0 GHz application circuit • 85 W POUT typical at 28 V • 10 dB power gain • 58% drain efficiency • Internally matched Applications • Broadband amplifiers • Electronic counter measures • Signal jamming • Milcom • Radar • Data link Typical P... |
| Datasheet |
 CG2H30070F Datasheet
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