| Part Number | L2SD2114KVLT3G |
| Manufacturer | Leshan Radio Company |
| Title | NPN silicon transistor |
| Description | Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KV... |
| Features |
1) High DC current gain.
S-L2SD2114KVLT1G Series
hFE = 1200 (Typ.)
2) High emitter-base voltage. VEBO =12V (Min.)
3
3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)
1 2
4) We declare that the material of product compliance w...
|
| Datasheet |
 L2SD2114KVLT3G Datasheet
|
