| Part Number | L2SC3356WT1G |
| Manufacturer | Leshan Radio Company |
| Title | High-Frequency Amplifier Transistor |
| Description | The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good cu... |
| Features |
• We declare that the material of product compliance with RoHS requirements. • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ... |
| Datasheet |
 L2SC3356WT1G Datasheet
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