| Part Number | KHB2D0N60P1 |
| Manufacturer | KEC semiconductor |
| Title | (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor |
| Description | This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche char... |
| Features |
VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V
K M L J D N N
P
Qg(typ.) = 10.9nC
H
1
2
3
1. GATE 2. DRAIN 3. SOURCE
MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current ...
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| Datasheet |
 KHB2D0N60P1 Datasheet
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