| Part Number | MJD112 |
| Manufacturer | KEC |
| Title | EPITAXIAL PLANAR NPN TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTR... |
| Features |
High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
...
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| Datasheet |
 MJD112 Datasheet
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