| Part Number | RFP2N10 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching ... |
| Features |
• 2A, 80V and 100V • rDS(ON) 1.05Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Moun... |
| Datasheet |
 RFP2N10 Datasheet
|
