| Part Number | IRGP4750D-EPbF |
| Manufacturer | International Rectifier |
| Title | Insulated Gate Bipolar Transistor |
| Description | IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 35A Applications Industr... |
| Features |
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
G...
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| Datasheet |
 IRGP4750D-EPbF Datasheet 652.44KB |
