| Part Number | IRGP4263D-EPbF |
| Manufacturer | International Rectifier |
| Title | Insulated Gate Bipolar Transistor |
| Description | VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC ... |
| Features |
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant
Benefits High efficiency in a wide range of applications and switching f...
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| Datasheet |
 IRGP4263D-EPbF Datasheet 920.92KB |
