| Part Number | IRGP4062-EPBF |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 ... |
| Features |
• Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Tight parameter distributio... |
| Datasheet |
 IRGP4062-EPBF Datasheet 247.68KB |
