| Description | IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF VCES = 1200V IC = 8A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.7V @ IC = 5A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA ... |
| Features |
Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant
G
E
n-channel
GCE
TO-220AB IRG8B08N120KDPbF
GCE
TO-247AC IRG8P08N120KDPbF
GC E
TO-247AD IRG8P08N120KD-EPbF
G Gate
C Collector
E Emitter
Benefits High Efficiency in a Motor Drive Applications Incr...
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| Datasheet |
 IRG8P08N120KDPbF Datasheet - 625.52KB |
