logo

ITCH20160B2E

Innogration
Part Number ITCH20160B2E
Manufacturer Innogration
Title High Power RF LDMOS FET
Description The ITCH20160B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with fr...
Features
 High Efficiency and Linear Gain Operations
 Integrated ESD Protection
 Internally Matched for Ease of Use
 Excellent thermal stability, low HCI drift
 Large Positiv...

Datasheet PDF File ITCH20160B2E Datasheet

ITCH20160B2E   ITCH20160B2E   ITCH20160B2E  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map