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GTVA220701FA

Infineon
Part Number GTVA220701FA
Manufacturer Infineon (https://www.infineon.com/)
Title Thermally-Enhanced High Power RF GaN HEMT
Description The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications....
Features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
• Input matched
• Typical Pulsed CW performance, 2170 MHz, 48 V - Output power at P3dB = 70 W - Efficiency = 70% - Gain = 20 dB
• Capable of handling ...

Datasheet PDF File GTVA220701FA Datasheet

GTVA220701FA   GTVA220701FA   GTVA220701FA  




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