Part Number | GTVA220701FA |
Manufacturer | Infineon (https://www.infineon.com/) |
Title | Thermally-Enhanced High Power RF GaN HEMT |
Description | The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.... |
Features |
input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features
• Input matched • Typical Pulsed CW performance, 2170 MHz, 48 V - Output power at P3dB = 70 W - Efficiency = 70% - Gain = 20 dB • Capable of handling ... |
Datasheet | GTVA220701FA Datasheet |