| Part Number | 2SC5885 |
| Manufacturer | Inchange Semiconductor Company Limited |
| Title | Silicon NPN Power Transistor |
| Description | ·High Breakdown Voltage ·Wide Area of Safe Operation ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic... |
| Features |
OL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hFE
DC Current Gain
IC=...
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| Datasheet |
 2SC5885 Datasheet
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