| Part Number | MJD5731 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -350V(Min) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance... |
| Features |
or
MJD5731
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V (BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA, IB=0
VCE(sat)
Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A
VBE(on)
Base-E...
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| Datasheet |
 MJD5731 Datasheet
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