| Part Number | MJD350 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·DPAK for ... |
| Features |
h j-a Thermal Resistance,Junction to Ambient 80 ℃/W
MJD350
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CON...
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| Datasheet |
 MJD350 Datasheet
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