| Part Number | MJD128 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Darlington Power Transistor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) ·DPAK for Surface Mount Applicat... |
| Features |
MJD128
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
MJD128
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SU...
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| Datasheet |
 MJD128 Datasheet
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