Part Number | MJD122 |
Manufacturer | Inchange Semiconductor |
Title | Silicon NPN Darlington Power Transistor |
Description | ·High DC current gain ·Built-in a damper diode at E-C ·Monolithic Construction With Built-in Base-Emitter Shunt Resistors ·Complementary Pairs Sim... |
Features |
.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJD122
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(sus) Collector-Emitter Susta...
|
Datasheet | MJD122 Datasheet |