| Part Number | MJD117 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·100%... |
| Features |
erwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -2A; IB=- 8mA
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -4A; IB=- 40mA
VBE(sat)* Base-Emitter Saturation Voltage
IC=- 4A; IB=- 40mA
V...
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| Datasheet |
 MJD117 Datasheet
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