| Part Number | KTB778 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistors |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type KTD998 ·Minimum Lot-to-Lot variations for ... |
| Features |
ge IC= -50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
VBE(on)
Base-Emitter On Voltage
IC= -5A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -120V ; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE
DC C...
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| Datasheet |
 KTB778 Datasheet
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