Part Number | IRF830FI |
Manufacturer | Inchange Semiconductor |
Title | N-Channel MOSFET Transistor |
Description | ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) ·100% avalanche... |
Features |
ER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-stage Resistance VGS= 10V; ID= 2.5A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
...
|
Datasheet | IRF830FI Datasheet |