| Part Number | IRF256 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current ID=20A@ TC=25℃ ·Drain Source Voltage : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.14Ω(Max) ·Nanosecond Switchi... |
| Features |
cification
IRF256
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS(TH) Gate Threshold Voltage VGS=0; ID=250µA VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=1... |
| Datasheet |
 IRF256 Datasheet
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