| Part Number | D1170 |
| Manufacturer | Inchange Semiconductor |
| Title | 2SD1170 |
| Description | ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= 3A, VCE= 2V) ·Low Collector Saturation Vol... |
| Features |
CS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1170
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
120
V
VCE(sat) VBE(sat) ICBO IEBO
Collector-Emitter Saturation Voltage
IC= 3A; IB= 3mA...
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| Datasheet |
 D1170 Datasheet
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