| Part Number | BD956 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= -500mA ·Complement to Type BD955 ·Minimum Lot-t... |
| Features |
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown ...
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| Datasheet |
 BD956 Datasheet
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