Part Number | 2SJ170 |
Manufacturer | Inchange Semiconductor |
Title | P-Channel MOSFET Transistor |
Description | ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust... |
Features |
LECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= -1mA
RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -6.5A
IGSS
Gat...
|
Datasheet | 2SJ170 Datasheet |