| Part Number | 2SJ126 |
| Manufacturer | Inchange Semiconductor |
| Title | P-Channel MOSFET Transistor |
| Description | ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust... |
| Features |
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= -1mA
RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -5A
IGSS
Gate Source Leakage Current
VGS= -20V;VDS= 0
IDSS
Zero Ga...
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| Datasheet |
 2SJ126 Datasheet
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