| Part Number | 2SD864 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation ... |
| Features |
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=25mA, RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA , IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A, IB=3mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=...
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| Datasheet |
 2SD864 Datasheet
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