| Part Number | 2SD861 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Power Dissipation- : PC= 45W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust ... |
| Features |
oltage IC= 1.5A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
IC= 1.5A ; VCE= 10V
ICEO
Collector Cutoff Current
VCE= 150V; IB= 0
ICES
Collector Cutoff Current
VCE= 350V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain...
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| Datasheet |
 2SD861 Datasheet
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