| Part Number | 2SD860 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device per... |
| Features |
se-Emitter On Voltage
IC= 2A; IB= 0.4A IC= 2A; VCE= 10V
ICEO
Collector Cutoff Current
VCE= 150V; IB= 0
ICES
Collector Cutoff Current
VCE= 350V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A; VCE= 10V
h...
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| Datasheet |
 2SD860 Datasheet
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